Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4148 Datenblatt(PDF) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
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1N4148 Datenblatt(HTML) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
1 / 4 page FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA Case: DO-35 Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified 1N4148 Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) HIGH VOLTAGE SILICON RECTIFIER Web Site: WWW.PS-PFS.COM |
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