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IRF7704GPBF Datenblatt(PDF) 3 Page - International Rectifier

Teilenummer IRF7704GPBF
Bauteilbeschribung  HEXFETPower MOSFET Ultra Low On-Resistance
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7704GPBF Datenblatt(HTML) 3 Page - International Rectifier

  IRF7704GPBF Datasheet HTML 1Page - International Rectifier IRF7704GPBF Datasheet HTML 2Page - International Rectifier IRF7704GPBF Datasheet HTML 3Page - International Rectifier IRF7704GPBF Datasheet HTML 4Page - International Rectifier IRF7704GPBF Datasheet HTML 5Page - International Rectifier IRF7704GPBF Datasheet HTML 6Page - International Rectifier IRF7704GPBF Datasheet HTML 7Page - International Rectifier IRF7704GPBF Datasheet HTML 8Page - International Rectifier IRF7704GPBF Datasheet HTML 9Page - International Rectifier  
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IRF7704GPbF
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3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.01
0.1
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-V
, Drain-to-Source Voltage (V)
DS
-2.70V
0.1
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-V
, Drain-to-Source Voltage (V)
DS
-2.70V
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
-10V
4.6A
Fig 4. Normalized On-Resistance
Vs. Temperature
2.5
3.0
3.5
4.0
4.5
5.0
-VGS, Gate-to-Source Voltage (V)
0.0
0.1
1.0
10.0
100.0
TJ = 25°C
TJ = 150°C
VDS = -25V
20µs PULSE WIDTH


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