IRF7757GPBF datasheet(1/9 Pages) IRF

Teilenummer	IRF7757GPBF

Bauteilbeschribung	HEXFETPower MOSFET Ultra Low On-Resistance

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Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Parameter

Max.

Units

VDS

Drain- Source Voltage

20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

4.8

ID @ TA= 70°C

Continuous Drain Current, VGS @ 4.5V

3.9

A

IDM

Pulsed Drain Current

19

PD @TA = 25°C

Power Dissipation

1.2

PD @TA = 70°C

Power Dissipation

0.76

Linear Derating Factor

9.5

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

05/14/09

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

105

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

IRF7757GPbF

HEXFET® Power MOSFET

VDSS

RDS(on) max (mW)

ID

20V

35@VGS = 4.5V

4.8A

40@VGS = 2.5V

3.8A

TSSOP-8

Description

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

l Available in Tape & Reel

l Common Drain Configuration

l Lead-Free

l Halogen-Free

HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

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PD- 96154A

IRF7757GPBF Datenblatt(PDF) 1 Page - International Rectifier

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