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BTA208S-600B Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BTA208S-600B
Bauteilbeschribung  Three-quadrant triacs high commutation
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BTA208S-600B Datenblatt(HTML) 6 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
6 of 13
Philips Semiconductors
BTA208S-600B; BTA208S-800B
Three-quadrant triacs high commutation
6.
Static characteristics
[1]
Device does not trigger in the T2
− G+ quadrant.
Table 5:
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
[1]
T2+ G+
2
18
50
mA
T2+ G
2
2150mA
T2
− G−
2
3450mA
IL
latching current
VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
-
31
60
mA
T2+ G
-
3490mA
T2
− G−
-
3060mA
IH
holding current
VD = 12 V; IGT = 0.1 A; see Figure 11
-
3160mA
VT
on-state voltage
IT = 10 A; see Figure 9
-
1.3
1.65
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; see Figure 7
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.25
0.4
-
V
ID
off-state current
VD =VDRM(max); Tj = 125 °C
-
0.1
0.5
mA


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