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BTA208S-600B Datenblatt(PDF) 6 Page - NXP Semiconductors |
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BTA208S-600B Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 13 page 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 6 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 6. Static characteristics [1] Device does not trigger in the T2 − G+ quadrant. Table 5: Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 [1] T2+ G+ 2 18 50 mA T2+ G − 2 2150mA T2 − G− 2 3450mA IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ - 31 60 mA T2+ G − - 3490mA T2 − G− - 3060mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 - 3160mA VT on-state voltage IT = 10 A; see Figure 9 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 mA |
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Ähnliche Beschreibung - BTA208S-600B |
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