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BTA204S-800C Datenblatt(PDF) 8 Page - NXP Semiconductors |
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BTA204S-800C Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 13 page 9397 750 14862 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 May 2005 8 of 13 Philips Semiconductors BTA204S series B and C Three-quadrant triacs high communication 7. Dynamic characteristics 8. Package information Refer to mounting instructions for SOT428 (DPAK) package. Plastic meets requirements of UL94 V-0 at 1 ⁄ 8 inch. Table 6: Dynamic characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BTA204S-600B BTA204S-800B BTA204S-600C BTA204S-800C Unit Min Typ Max Min Typ Max dVD/dt critical rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 1000 V/ µs dIcom/dt critical rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 4A; dVcom/dt = 20 V/µs; gate open circuit 6 - - 3 - - A/ms tgt gate controlled turn-on time ITM = 12 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs -2 --2 - µs |
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