STK22N6F3 datasheet(4/15 Pages) STMICROELECTRONICS

Teilenummer	STK22N6F3

Bauteilbeschribung	N-channel 60 V, 0.0055 OHM, 22 A, PolarPAK STripFET Power MOSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STK22N6F3

4/15

Doc ID 14850 Rev 2

2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

60

-

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125 °C

--

10

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20V

-

±

200

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2

-

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 11 A

-

0.0055

0.006

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

-

2500

536

44

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=48 V, ID = 22 A

VGS =10 V

Figure 14

-

41

12

10

-

nC

RG

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-0.9

-

Ω

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

Turn-on delay time

Rise time

VDD= 30 V, ID= 11 A,

RG=4.7 Ω, VGS= 10 V

Figure 13

-

16

14

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=30 V, ID= 11 A,

RG=4.7 Ω, VGS= 10 V

Figure 13

-

28

5

-

ns

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