Datenblatt-Suchmaschine für elektronische Bauteile |
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TPC8020-H Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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TPC8020-H Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8020-H 2006-11-16 5 2 0 0 40 80 120 1.2 1.6 160 0.8 0.4 (1) (2) 160 −40 0 40 80 120 −80 20 16 12 8 4 0 0 1 −0.2 10 100 −0.6 −0.8 −1.0 −0.4 10 0.1 100 1000 10000 1 10 100 0 8 24 32 40 50 20 10 30 40 0 16 20 8 4 12 16 0 Drain-source voltage VDS (V) Capacitance – VDS ソース接地 VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain-source voltage VDS (V) IDR – VDS VGS = 0 V 10 4.5 1 3 Common source Ta = 25°C Pulse test Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature Ta (°C) RDS (ON) – Ta ID = 13A VGS = 10 V VGS = 4.5 V ID = 3.5A,6.5A,13A 3.5A,6.5A Common source Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics 0 0.5 1 1.5 −80 −40 0 40 80 120 160 2 2.5 Ambient temperature Ta (°C) PD – Ta (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t= 10s VDD = 6 V VDS VGS Common source ID = 13 A Ta = 25°C Pulse test 12 V 24 V |
Ähnliche Teilenummer - TPC8020-H_06 |
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Ähnliche Beschreibung - TPC8020-H_06 |
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