Datenblatt-Suchmaschine für elektronische Bauteile |
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STP85NF55 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STP85NF55 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 15 page STB/I/P85NF55 Electrical characteristics Doc ID 8405 Rev 9 5/15 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 16 on page 8 - 75 210 5.5 ns nC A |
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