Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

STP11NM80 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STP11NM80
Bauteilbeschribung  N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11NM80 Datenblatt(HTML) 4 Page - STMicroelectronics

  STP11NM80_10 Datasheet HTML 1Page - STMicroelectronics STP11NM80_10 Datasheet HTML 2Page - STMicroelectronics STP11NM80_10 Datasheet HTML 3Page - STMicroelectronics STP11NM80_10 Datasheet HTML 4Page - STMicroelectronics STP11NM80_10 Datasheet HTML 5Page - STMicroelectronics STP11NM80_10 Datasheet HTML 6Page - STMicroelectronics STP11NM80_10 Datasheet HTML 7Page - STMicroelectronics STP11NM80_10 Datasheet HTML 8Page - STMicroelectronics STP11NM80_10 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 17 page
background image
Electrical characteristics
STB/F/P/W11NM80
4/17
Doc ID 9241 Rev 10
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
800
V
dv/dt (1)
1.
Characteristic value at turn off on inductive load
Drain source voltage slope
VDD = 640 V, ID = 11 A,
VGS = 10 V
30
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
0.35
0.40
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 7.5 A
-8
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
1630
750
30
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640 V, ID = 11 A
VGS =10 V
Figure 10
-
43.6
11.6
21
-
nC
nC
nC
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-2.7
-
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
Figure 17
-
22
17
46
15
-
ns
ns
ns
ns


Ähnliche Teilenummer - STP11NM80_10

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STP11NM80 STMICROELECTRONICS-STP11NM80 Datasheet
582Kb / 14P
   N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET
STP11NM80 STMICROELECTRONICS-STP11NM80 Datasheet
467Kb / 17P
   N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET
STP11NM80 STMICROELECTRONICS-STP11NM80 Datasheet
908Kb / 22P
   N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
September 2011
logo
Inchange Semiconductor ...
STP11NM80 ISC-STP11NM80 Datasheet
331Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Ähnliche Beschreibung - STP11NM80_10

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STB11NM80 STMICROELECTRONICS-STB11NM80_07 Datasheet
467Kb / 17P
   N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET
STB11NM80 STMICROELECTRONICS-STB11NM80_V01 Datasheet
908Kb / 22P
   N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
September 2011
STB30NM60N STMICROELECTRONICS-STB30NM60N_08 Datasheet
768Kb / 18P
   N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
STB16NM50N STMICROELECTRONICS-STB16NM50N Datasheet
554Kb / 18P
   N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
STX25NM50N STMICROELECTRONICS-STX25NM50N Datasheet
616Kb / 18P
   N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STP30NM50N STMICROELECTRONICS-STP30NM50N Datasheet
628Kb / 18P
   N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STB13NM50N STMICROELECTRONICS-STB13NM50N_08 Datasheet
573Kb / 18P
   N-channel 500 V - 0.250 廓 - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK
STB14NM65N STMICROELECTRONICS-STB14NM65N Datasheet
550Kb / 18P
   N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STB25NM60NX STMICROELECTRONICS-STB25NM60NX Datasheet
578Kb / 18P
   N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STP21NM60N STMICROELECTRONICS-STP21NM60N_08 Datasheet
562Kb / 18P
   N-channel 600 V - 0.17 廓 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh??Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com