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STP3NK80Z Datenblatt(PDF) 6 Page - STMicroelectronics |
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STP3NK80Z Datenblatt(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 6/18 Doc ID 9565 Rev 6 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 2.5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 10 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on voltage ISD= 2.5 A, VGS=0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V (see Figure 21) - 384 1600 8.4 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C (see Figure 21) - 474 2100 8.8 ns µC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Gate-source breakdown voltage Igs=± 1mA (open drain) 30 - - V |
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