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STF13NK50Z Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STF13NK50Z
Bauteilbeschribung  N-channel 500 V, 0.40 廓, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF13NK50Z Datenblatt(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
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Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
11
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
44
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=11 A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=25 °C
Figure 21
380
3.4
18
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
Figure 21
425
3.9
18.5
ns
µC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30
V


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