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BYG20G Datenblatt(PDF) 1 Page - EIC discrete Semiconductors

Teilenummer BYG20G
Bauteilbeschribung  ULTRAFAST AVALANCHE RECTIFIERS
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Hersteller  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
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BYG20G Datenblatt(HTML) 1 Page - EIC discrete Semiconductors

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BYG20D - BYG20J
ULTRAFAST AVALANCHE
RECTIFIERS
PRV : 200 - 600 Volts
Io : 1.5 Amperes
FEATURES :
* Glass passivated junction
* Low profile package
* Ideal for automated placement
* Low reverse current
* Soft recovery characteristics
* Ultrafast reverse recovery time
* Pb
/ RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise noted
.
SYMBOL
BYG20D
BYG20G
BYG20J
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
200
400
600
V
Maximum Average Forward Current
IF(AV)
1.5
A
Peak Forward Surge Current 10 ms single half
sine wave superimposed on rated load
Maximum Instantaneous
at IF = 1 A, Tj = 25 °C
1.3
Forward Voltage
(1)
at IF = 1.5 A, Tj = 25 °C
1.4
Maximum DC Reverse Current
at VR = VRRM, Tj = 25 °C
IR
1.0
at VR = VRRM, Tj = 100 °C
IR(H)
10
Maximum Reverse Recovery Time
( IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A)
Typical Thermal Resistance, Junction to Lead
RӨJL
25
°C/W
Typical Thermal Resistance, Junction to Ambient
(2)
RӨJA
150
°C/W
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1A, Tj = 25 °C
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to + 150
°C
Notes :
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Mounted on epoxy-glass hard tissue
Page 1 of 2
Rev. 03 : September 18, 2008
ER
20
mJ
μA
Trr
ns
75
VF
V
RATING
A
IFSM
30
2.3
± 0.2
SMA
1.6
± 0.25
2.6
± 0.15
Dimensions in millimeters
1.3
± 0.2
1.6
± 0.25
IATF 0060636
SGS TH07/1033
TW00/17276EM
TH97/10561QM


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