Datenblatt-Suchmaschine für elektronische Bauteile |
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BC847BPDXV6T1G Datenblatt(PDF) 4 Page - ON Semiconductor |
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BC847BPDXV6T1G Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 8 page BC847BPDXV6T1, BC847BPDXV6T5 http://onsemi.com 4 TYPICAL NPN CHARACTERISTICS Figure 1. Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) 2.0 Figure 2. “Saturation” and “On” Voltages IC, COLLECTOR CURRENT (mAdc) 0.2 0.5 1.0 10 20 50 0.2 100 Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 TA = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V VCE = 10 V TA = 25°C −55°C to +125°C TA = 25°C IC = 50 mA IC = 100 mA IC = 200 mA IC = 20 mA IC = 10 mA 1.0 Figure 5. Capacitances VR, REVERSE VOLTAGE (VOLTS) 10 Figure 6. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mAdc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 VCE = 10 V TA = 25°C 0.8 4.0 8.0 TA = 25°C Cob Cib |
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