BC847CDXV6T5G datasheet(3/5 Pages) ONSEMI

Teilenummer	BC847CDXV6T5G

Bauteilbeschribung	Dual General Purpose Transistors

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Hersteller	ONSEMI [ON Semiconductor]

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BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

100

300

400

600

700

900

1000

0.1

0.01

0.001

0.0001

0

0.05

0.10

0.15

0.20

0.25

0.30

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.4

0.5

0.6

0.8

1.0

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.1

1.2

200

500

800

VCE = 1 V

150°C

25°C

−55°C

IC/IB = 20

150°C

25°C

−55°C

0.7

0.9

IC/IB = 20

150°C

25°C

−55°C

0.4

0.7

1.0

VCE = 5 V

150°C

25°C

−55°C

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