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BC848CDXV6T1G Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer BC848CDXV6T1G
Bauteilbeschribung  Dual General Purpose Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 2
1
Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
BC847
BC848
Unit
Collector − Emitter Voltage
VCEO
45
30
V
Collector − Base Voltage
VCBO
50
30
V
Emitter − Base Voltage
VEBO
6.0
5.0
V
Collector Current − Continuous
IC
100
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
PD
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
350
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
PD
500
4.0
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad
SOT−563
CASE 463A
PLASTIC
1
6
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
http://onsemi.com
MARKING DIAGRAMS
1x M G
G
BC847CDXV6T1
1x
= Device Code
x = G or M
M
= Date Code
G
=Pb−Free Package
(Note: Microdot may be in either location)
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION


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