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BC848CDXV6T1G Datenblatt(PDF) 1 Page - ON Semiconductor |
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BC848CDXV6T1G Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 2 1 Publication Order Number: BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50 30 V Emitter − Base Voltage VEBO 6.0 5.0 V Collector Current − Continuous IC 100 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C PD 357 2.9 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 350 °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C PD 500 4.0 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 250 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad SOT−563 CASE 463A PLASTIC 1 6 Q1 (1) (2) (3) (4) (5) (6) Q2 http://onsemi.com MARKING DIAGRAMS 1x M G G BC847CDXV6T1 1x = Device Code x = G or M M = Date Code G =Pb−Free Package (Note: Microdot may be in either location) 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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