BC807-16W datasheet(6/11 Pages) INFINEON

Teilenummer	BC807-16W

Bauteilbeschribung	PNP Silicon AF Transistor

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 11 page

2007-06-08

6

BC807.../BC808...

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

0

10

EHP00214

BEsat

V

2.0

V

4.0

-1

100

101

3

10

5

Ι

C

mA

5

2

10

1.0

3.0

˚C

-50

25 ˚C

˚C

150

Collector cutoff current ICBO = ƒ(TA)

VCBO = 25 V

0

10

EHP00213

A

T

150

0

5

10

Ι

CBO

nA

50

100

1

10

2

10

4

10

˚C

typ

max

103

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00210

03

10

mA

1

10

3

10

5

10

1

10

2

10

2

C

T

f

MHz

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0

2

4

6

8

10

12

14

16

V

20

VCB/VEB

0

5

10

15

20

25

30

35

40

45

50

55

pF

65

CCB

CEB

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BC807-16W Datenblatt(PDF) 6 Page - Infineon Technologies AG

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Ähnliche Teilenummer - BC807-16W

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