Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI15N60CFD Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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SPI15N60CFD Datenblatt(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page SPI15N60CFD Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.8 K/W R thJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=13.4 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=750 µA 345 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 1.4 - µA V DS=600 V, V GS=0 V, T j=150 °C - 1200 - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.4 A, T j=25 °C - 0.28 0.33 Ω V GS=10 V, I D=9.4 A, T j=150 °C - 0.78 - Gate resistance R G f =1 MHz, open drain - 1.3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=9.4 A -8 - S Values Thermal resistance, junction - ambient Rev. 1.0 page 2 2007-01-29 |
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