SPI15N60CFD datasheet(2/12 Pages) INFINEON

Teilenummer	SPI15N60CFD

Bauteilbeschribung	CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

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Hersteller	INFINEON [Infineon Technologies AG]

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SPI15N60CFD

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

0.8

K/W

R thJA

leaded

-

62

Soldering temperature, wave

soldering only allowed at leads

T sold

1.6 mm (0.063 in.)

from case for 10 s

-

260

°C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

V

Avalanche breakdown voltage

V (BR)DS V GS=0 V, I D=13.4 A

-

700

-

Gate threshold voltage

V GS(th)

V DS=V GS, I D=750 µA

345

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

-

1.4

-

µA

V DS=600 V, V GS=0 V,

T j=150 °C

-

1200

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=9.4 A,

T j=25 °C

-

0.28

0.33

Ω

V GS=10 V, I D=9.4 A,

T j=150 °C

-

0.78

-

Gate resistance

R G

f =1 MHz, open drain

-

1.3

-

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=9.4 A

-8

-

S

Values

Thermal resistance, junction -

ambient

Rev. 1.0

page 2

2007-01-29

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