Datenblatt-Suchmaschine für elektronische Bauteile |
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N0400P Datenblatt(PDF) 7 Page - Renesas Technology Corp |
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N0400P Datenblatt(HTML) 7 Page - Renesas Technology Corp |
7 / 10 page Data Sheet D19676EJ1V0DS 5 N0400P DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 10 20 30 40 50 60 70 80 -75 -25 25 75 125 175 Pulsed VGS = −2.5 V −4.5 V Tch - Channel Temperature - °C 10 100 1000 10000 -0.1 -1 -10 -100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 -0.1 -1 -10 -100 tr td(off) td(on) tf VDD = −20 V VGS = −4.5 V RG = 0 Ω ID - Drain Current - A 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 0 5 10 15 20 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 VDS ID = −15 A VGS VDD = −32 V −20 V −8 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -0.01 -0.1 -1 -10 -100 0 0.5 1 1.5 Pulsed −4.5 V VGS = 0 V −2.5 V VF(S-D) - Source to Drain Voltage - V 1 10 100 1000 -0.1 -1 -10 -100 VGS = 0 V di/dt = −100 A/μs IF - Diode Forward Current - A |
Ähnliche Teilenummer - N0400P |
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Ähnliche Beschreibung - N0400P |
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