SILICON EPITAXIAL

PLANAR DIODE

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8271

Issue 2

Page 1 of 4

1N4148D2A / 1N4148D2B

A = 25°C unless otherwise stated)

VBR

Breakdown Voltage

100V

VRWM

Working Peak Reverse Voltage

75V

IO

Average Rectified Output Current, TA = 75°C

(1)

200mA

IFSM

Surge Current, half sine wave, tp = 8.3ms

(2)

2A

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

(1) IO is rated at 200mA @ TA = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where

TJ(Max) does not exceed 175°C

(2) TA = 25°C @ IO=0 and VRWM for ten 8.3mS surges at 1 minute intervals.