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STD12NF06T4-1 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STD12NF06T4-1 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 14 page STD12NF06, STD12NF06T4 Electrical characteristics Doc ID 8431 Rev 7 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 12 A ISDM Source-drain current (pulsed) - 48 A VSD (1) 1. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Forward on voltage ISD = 12A, VGS = 0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, di/dt = 100A/µs, VDD = 30V, TJ = 150°C Figure 16 on page 8 - 50 65 3.5 ns nC A |
Ähnliche Teilenummer - STD12NF06T4-1 |
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Ähnliche Beschreibung - STD12NF06T4-1 |
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