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STD12NF06T4-1 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STD12NF06T4-1
Bauteilbeschribung  N-channel 60 V, 0.08廓, 12 A, DPAK, IPAK STripFET??II Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STD12NF06T4-1 Datenblatt(HTML) 5 Page - STMicroelectronics

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STD12NF06, STD12NF06T4
Electrical characteristics
Doc ID 8431 Rev 7
5/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
-
12
A
ISDM
Source-drain current (pulsed)
-
48
A
VSD
(1)
1.
Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 12A, VGS = 0
-
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A,
di/dt = 100A/µs,
VDD = 30V, TJ = 150°C
Figure 16 on page 8
-
50
65
3.5
ns
nC
A


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