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STPS10L45CG Datenblatt(PDF) 2 Page - STMicroelectronics |
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2 / 10 page Characteristics STPS10L45C 2/10 1 Characteristics When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.33 x IF(AV) + 0.026 IF 2 (RMS) Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward voltage 20 A IF(AV) Average forward current TO-220AB / D2PAK / I2PAK Tc =135° C δ = 0.5 Per diode Per device 5 10 A TO-220FPAB Tc = 140° C δ = 0.5 Per diode Per device 5 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 150 A IRRM Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 2 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25°C 2700 W Tstg Storage temperature range -65 to + 150 ° C Tj Maximum operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink 150 ° C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB / D2PAK / I2PAK Per diode Total 3 1.7 °C/W Rth (c) Coupling 0.35 Rth(j-c) Junction to case TO-220FPAB Per diode Total 5 3.8 °C/W Rth (c) Coupling 2.5 Table 3. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25° C VR = VRRM 0.15 mA Tj = 100° C 45 90 mA VF (1) Forward voltage drop Tj = 25° C IF = 5 A 0.53 V Tj = 125° C IF = 5 A 0.36 0.46 Tj = 25° C IF = 10 A 0.67 Tj = 125° C IF = 10 A 0.49 0.59 dPtot dTj --------------- 1 Rth j a – () -------------------------- < |
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