SILICON EPITAXIAL

PNP TRANSISTOR

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verify that datasheets are current before placing orders.

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Document Number 8108

Issue 1

BCY71DCSM

In A Dual Ceramic Hermetic Package

Industrial Applications

Each Side

Total Device

VCBO

Collector - Base Voltage

-45V

VCEO

Collector - Emitter Voltage

-45V

VEBO

Emitter – Base Voltage

-5V

IC

Continuous Collector Current

-200mA

ICM

Peak Collector Current

-200mA

PD

Total Power Dissipation at

TA = 25°C

350mW

Derate Above 25°C

2mW/°C

2.9mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

Symbols Parameters

Min.

Typ.

Max. Units

RθJA

Thermal Resistance, Junction To Ambient

500

°C/W

RθJC

Thermal Resistance, Junction To Case

150

°C/W

* Total device power dissipation limited by package.