Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1382 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SA1382 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SA1382 2009-12-21 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1382 Power Amplifier Applications High-Speed Switching Applications • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC IC −2 Collector current Peak ICP −4 A Base current IB −1 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) |
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