Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3074 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SC3074 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC3074 2005-02-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ) • Complementary to 2SA1244 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 1 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
Ähnliche Teilenummer - 2SC3074_05 |
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Ähnliche Beschreibung - 2SC3074_05 |
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