Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3076 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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2SC3076 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC3076 2005-02-01 4 IC – VBE PC – Ta Base-emitter voltage VBE (V) Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Safe Operating Area 12 0 0 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 2 4 6 8 10 (1) (2) (3) 0 0 Common emitter VCE = 2 V 2.0 1.5 1.0 0.5 0.4 0.8 1.2 1.6 25 −55 Tc = 100°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.5 5 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C 30 100 5 10 1 3 1 0.03 0.05 0.1 0.3 0.5 3 50 100 ms* |
Ähnliche Teilenummer - 2SC3076_05 |
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Ähnliche Beschreibung - 2SC3076_05 |
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