Datenblatt-Suchmaschine für elektronische Bauteile |
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LA7565BM Datenblatt(PDF) 3 Page - Sanyo Semicon Device |
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LA7565BM Datenblatt(HTML) 3 Page - Sanyo Semicon Device |
3 / 16 page No. 5636-3/16 LA7565B, 7565BM Parameter Symbol Conditions Ratings Unit min typ max [First SIF Block] Conversion gain VG 37.5 43 49.5 dB 5.5 MHz output level SO 46 100 150 mVrms First SIF maximum input Si max 112 223 mVrms First SIF input resistance Ri (SIF) 33.4 MHz 2 k Ω First SIF input capacitance Ci (SIF) 33.4 MHz 3 pF [SIF Block] Limiting voltage Vi (lim) 43 48 53 dBµV FM detector output voltage VO (FM) 5.5 MHz ± 30 kHz 720 900 1100 mVrms AM rejection ratio AMR 50 60 dB Total harmonic distortion THD 0.3 0.8 % SIF S/N ratio S/N (FM) 57 62 dB [SIF Converter] Conversion gain VG (SIF) 7 11 14 dB Maximum output level V max 102 108 111 dBµV Carrier suppression ratio VGR (5.5) 14 26 dB Oscillator level VOSC 70 mVp-p Oscillator leakage OSCleak 8 24 dB Oscillator stopped current I4 300 µA Continued from preceding page. Mounted on a 65 × 72 × 1.6 mm printed circuit board Ambient temperature, Ta – °C Ambient temperature, Ta – °C Independent IC |
Ähnliche Teilenummer - LA7565BM |
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Ähnliche Beschreibung - LA7565BM |
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