Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4541 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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2SC4541 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC4541 2004-07-07 4 Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta 2.0 0 1.6 0.8 0.4 0 1.0 3.0 Common emitter VCE = 2 V 2.0 1.2 −25 Ta = 100°C 0.5 1.5 2.5 25 (1) 0 160 100 140 40 80 0 0.6 0.2 0.8 0.4 1.4 20 (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink (2) 1.0 60 120 1.2 0.1 10 1 0.3 1 10 3 0.01 30 0.005 0.03 IC max (pulse)* IC max (continuous) *100 ms *10 ms *t = 1 ms 0.1 3 0.3 100 *: Single nonrepetitive pulse Ta = 25°C **: Mounted on a ceramic substrate Curves must be derated linearly with increase in temperature **: DC operation Ta = 25°C 40 × 50 × 0.8 t **: DC operation Ta = 25°C 250 mm 2 × 0.8 t **: DC operation Ta = 25°C VCEO max |
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