Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4541 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SC4541 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC4541 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Base current IB 0.6 A Collector power dissipation PC 500 mW Collector power dissipation PC (Note) 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
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