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2SC4541 Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer 2SC4541
Bauteilbeschribung  Power Amplifier Applications Power Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4541 Datenblatt(HTML) 1 Page - Toshiba Semiconductor

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2SC4541
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)
• High speed switching time: tstg = 0.5 µs (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1736
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Base current
IB
0.6
A
Collector power dissipation
PC
500
mW
Collector power dissipation
PC
(Note)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)


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