Si1141-A10-GM datasheet(5/66 Pages) SILABS

Teilenummer	Si1141-A10-GM

Bauteilbeschribung	PROXIMITY/AMBIENT LIGHT SENSOR IC WITH I2C INTERFACE

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Si11 41/42/43

Preliminary Rev. 0.5

5

Table 3. Performance Characteristics1

Parameter

Symbol

Conditions

Min

Typ

Max

Units

IDD OFF Mode

Ioff

VDD < VDD_OFF (leakage from SCL,

SDA, and INT not included)

—

240

1000

nA

IDD Standby Mode

Isb

No ALS / PS Conversions

No I2C Activity

after t > TBD µs, VDD =1.8 V

—

150

500

nA

IDD Standby Mode

Isb

No ALS / PS Conversions

No I2C Activity

after t > TBD µs, VDD =3.3 V

—1.83

—

µA

IDD Actively Measuring

Iactive

Without LED influence, VDD = 3.3 V

—

4.3

5.2

mA

Peak IDD while LED1,

LED2, or LED3 is Actively

Driven

VDD =3.3 V

—

8

—

mA

LED1, LED2, LED3,

Saturation Voltage2

1.8< VDD<2.4, ILEDx<100 mA

1.8<VDD<2.4, ILEDx< 200 mA

2.4<VDD<3.6, ILEDx<200 mA

2.4<VDD<3.6, ILEDx<359 mA

—

0.3

0.5

0.3

0.5

—

V

LED1, LED2, LED3

Pulse Width

tPS

—25.6

30

µs

LED1, LED2, LED3

Leakage Current

VDD =3.3 V, VLEDx<3.0, no strobe

VDD = 3.3 V, 3.0<VLEDx< 5.0, no strobe

—

.01

1.0

5.0

µA

Notes:

1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx.

2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply

and voltage drop allow the driver to saturate and current regulation is lost.

3. Represents the time during which the device is drawing a current equal to Iactive for power estimation purposes.

Assumes default settings.

4. Applies to single 25.6 µs pulse measurement. By increasing irLED pulse width, 0.001 µW/cm2 under low light is

possible.

5. ALS Sensitivity under low light conditions can be improved by increasing ADC integration time. 10 mlx resolution

possible under the highest ADC integration time setting.

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