Datenblatt-Suchmaschine für elektronische Bauteile |
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BAS116V Datenblatt(PDF) 1 Page - Diodes Incorporated |
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BAS116V Datenblatt(HTML) 1 Page - Diodes Incorporated |
1 / 3 page BAS116V Document number: DS30562 Rev. 5 - 2 1 of 3 www.diodes.com March 2008 © Diodes Incorporated BAS116V SURFACE MOUNT LOW LEAKAGE DIODE Features • Surface Mount Package Ideally Suited for Automated Insertion • Very Low Leakage Current • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.003 grams (approximate) TOP VIEW BOTTOM VIEW SOT-563 Internal Schematic TOP VIEW C1 A 1 NC NC A2 C 2 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 85 V RMS Reverse Voltage VR(RMS) 60 V Forward Continuous Current (Note 2) IFM 215 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs @ t = 1.0ms @ t = 1.0s IFSM 4.0 1.0 0.5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 2) PD 150 mW Thermal Resistance Junction to Ambient Air (Note 2) RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 3) V(BR)R 85 ⎯ ⎯ V IR = 100μA Forward Voltage VFM ⎯ ⎯ 0.90 1.0 1.1 1.25 V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Leakage Current (Note 3) IRM ⎯ ⎯ 5.0 80 nA nA VR = 75V VR = 75V, TJ = 150°C Total Capacitance CT ⎯ 2 ⎯ pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ ⎯ 3.0 μs IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. No purposefully added lead. 2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
Ähnliche Teilenummer - BAS116V_08 |
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Ähnliche Beschreibung - BAS116V_08 |
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