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BC856AS-7 Datenblatt(PDF) 1 Page - Diodes Incorporated |
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BC856AS-7 Datenblatt(HTML) 1 Page - Diodes Incorporated |
1 / 3 page DS30834 Rev. 7 - 2 1 of 3 www.diodes.com BC856AS © Diodes Incorporated BC856AS DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary NPN Types Available (BC846AS) • Lead Free/RoHS Compliant (Note 1) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Pin Connections: See Diagram • Marking Codes: See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ⎯ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0 ° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -65 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Power Dissipation (Note 2) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 2) RθJA 625 °C/W Operating and Storage Temperature Range Tj, Tstg -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -80 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -65 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1μA, IC = 0 DC Current Gain (Note 3) hFE 125 180 250 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — — -700 -850 — mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 — -650 — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA Collector-Cutoff Current (Note 3) ICES ICBO ICBO — — — — — — -15 -15 -4.0 nA nA µA VCE = -80V VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Base Capacitance CCB — 3 — pF VCB = -10V, f = 1.0MHz Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. C 1 65 4 3 2 1 B 2 E 2 E 1 B 1 C 2 A M J L D C B H K F Top View Please click here to visit our online spice models database. |
Ähnliche Teilenummer - BC856AS-7 |
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Ähnliche Beschreibung - BC856AS-7 |
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