DZT591C datasheet(1/4 Pages) DIODES

Teilenummer	DZT591C

Bauteilbeschribung	PNP SURFACE MOUNT TRANSISTOR

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Hersteller	DIODES [Diodes Incorporated]

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DZT591C

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Type Available (DZT491)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 3)

Mechanical Data

•

Case: SOT-223

•

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish - Matte Tin annealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking & Type Code Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.115 grams (approximate)

2

3

4

1

SOT-223

4

3

2

1

C

B

E

3

1

2,4

BASE

COLLECTOR

EMITTER

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Collector Continuous Current (Note 3)

IC

-1

A

Peak Collector Current

ICM

-2

A

Base Current

IB

-200

mA

Power Dissipation (Note 3)

Pd

1

W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Cutoff Current

ICBO

⎯

-100

nA

VCB = -60V

Emitter-Base Cutoff Current

IEBO

⎯

-100

nA

VEB = -4V

Collector-Emitter Cutoff Current

ICES

⎯

-100

nA

VCES = -60V

Collector-Base Breakdown Voltage

V(BR)CBO

-80

⎯

V

IC = 100μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

-60

⎯

V

IC = 10mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

⎯

V

IE = 100μA

ON CHARACTERISTICS (Note 4)

⎯

-0.3

V

IC = -500mA, IB = -50mA

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.6

V

IC = -1A, IB = -100mA

100

⎯

VCE = -5V, IC = -1mA

100

⎯

300

⎯

VCE = -5V, IC = -500mA

80

⎯

VCE = -5V, IC = -1A

DC Current Gain

hFE

15

⎯

VCE = -5V, IC = -2A

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.2

V

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage

VBE(on)

⎯

-1

V

IC = -1A, VCE = -5V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

150

⎯

MHz VCE = -10V, IC = -50mA, f = 100MHz

Output Capacitance

Cobo

⎯

13

⎯

pF

VCB = -10V, f =1MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.

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