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2SD1223 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SD1223
Bauteilbeschribung  Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1223 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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2SD1223
2010-02-05
3
IC – VCE
IC – VCE
IC – VCE
IC – VBE
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector current IC (A)
1
2
3
4
1
2
3
0
0
5
4
Common emitter
Tc = 25°C
IB = 200 μA
450
250
500
400
350
0
300
1
2
3
4
1
2
3
0
0
5
4
Common emitter
Tc = −55°C
IB = 400 μA
700
800
600
0
500
0.8
1.6
2.4
3.2
1
2
3
0
0
4.0
4
Common emitter
VCE = 2 V
Tc = 100°C
−55
25
1
2
3
4
1
2
3
0
0
5
4
Common emitter
Tc = 100°C
IB = 125 μA
300
200
150
175
0
250
VCE (sat) – IC
hFE – IC
Common emitter
VCE = 2 V
300
0.1
10000
500
1000
3000
5000
0.3
1
10
3
Tc = 100°C
−55
25
0.3
0.2
Common emitter
IC/IB = 500
0.5
1
3
3
1
0.5
Tc = −55°C
100
25
5


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