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2SD1314 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SD1314
Bauteilbeschribung  High Power Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1314 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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2SD1314
2006-11-21
3
Collector current IC (A)
VCE – IC
Collector current IC (A)
VCE – IC
Collector current IC (A)
Switching time – IC
Collector current IC (A)
VCE – IC
hFE – IC
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
0.5
0
100
15
Common emitter
Tc = 25°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 150 W
5
10
20
25
30
35
1
3
5
10
30
50
300
500
0.5
0
100
15
Common emitter
Tc = 100°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 60 W
5
10
20
25
30
35
1
3
5
10
30
50
300
500
Tc = 100°C
25
−40
Common emitter
VCE = 5 V
30
10
0.1
2000
0.3
1
3
10
30
50
100
300
500
1000
Common emitter
IB = 0.4 A
Tc = −40°C
25
100
0.3
0.1
30
30
0.3
1
3
10
0.5
1
3
5
10
Common emitter
VCC = 300 V
IB = ±0.4 A
Tc = 25°C
0.1
0
16
100
2
4
6
8
10
12
14
0.3
0.5
1
3
5
10
30
50
tstg
tf
ton
0.5
0
100
15
Common
emitter
Tc = −40°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 150 W
5
10
20
25
30
35
1
3
5
10
30
50
300
500


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