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2SD1407A Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SD1407A
Bauteilbeschribung  Power Amplifier Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1407A Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SD1407A
2009-07-24
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
V
hFE (1)
(Note 1)
VCE = 5 V, IC = 1 A
40
240
DC current gain
hFE (2)
VCE = 5 V, IC = 4 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.4 A
2.0
V
Base-emitter saturation voltage
VBE
VCE = 5 V, IC = 1 A
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
12
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
100
pF
Note 1: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Marking
Note 2: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 2
D1407A
Characteristics
indicator
Part No. (or abbreviation code)


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