2SD1407A_09 datasheet(3/4 Pages) TOSHIBA

Teilenummer	2SD1407A

Bauteilbeschribung	Power Amplifier Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SD1407A

2009-07-24

3

Collector-emitter voltage VCE (V)

IC – VCE

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

hFE – IC

Collector current IC (A)

VCE (sat) – IC

Collector-emitter voltage VCE (V)

Safe Operating Area

50

IB = 20 mA

100

150

250

200

300

5

0

Common emitter

Tc = 25°C

1

2

3

4

5

6

1

2

3

4

−25

25

Tc = 75°C

5

0

Common emitter

VCE = 5 V

0.4

0.8

1.2

1.6

2.0

2.4

1

2

3

4

−25

25

Tc = 75°C

500

10

0.01

Common emitter

VCE = 5 V

0.03

0.1

0.3

1

3

5

30

50

100

300

−25

25

Tc = 75°C

2

0.03

0.01

Common emitter

IC/IB = 10

0.03

0.1

0.3

1

3

5

0.05

0.1

0.3

0.5

1

1 ms*

IC max (pulsed)*

DC operation

Tc = 25°C

IC max (continuous)

10 ms*

100 ms*

1 s*

VCEO max

20

0.1

3

*: Single nonrepetitive

pulse Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

10

30

100

300

0.3

0.5

1

3

5

10

Ambient temperature Ta (°C)

PC – Ta

50

0

Tc = Ta

Infinite heat sink

25

50

75

100

125

150

10

20

30

40

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