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2SD1410A Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SD1410A
Bauteilbeschribung  High Voltage Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1410A Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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2SD1410A
2009-12-21
3
Collector
−emitter voltage VCE (V)
Collector
−emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Safe operating area
10000
0.03
0.3
1
10
300
3000
5000
0.1
500
Common emitter
VCE = 2 V
1000
100
25
−55
Tc = 100°C
3
Collector current IC (A)
VBE (sat) – IC
Collector current IC (A)
VCE (sat) – IC
0.05
10
Common emitter
IC/IB = 100
1
10
5
0.2
1
25
100
Tc = −55°C
3
0.5
0.1
0.3
3
0
0
Common emitter
Tc = 25°C
IB = 0.2 mA
6
2
3
4
5
1
2
3
4
8
1
20
10
0.5
2
1
0
5
6
7
7
5
3
0.05
3
10
30
100
0.01
IC max (Pulse)*
IC max
DC operation
(Tc = 25°C)
500 μs*
1 ms*
VCEO max
300
0.3
0.5
1
5
10
20
0.03
0.1
(Continuous)
10 ms*
100 ms*
0.05
10
Common emitter
IC/IB = 100
1
10
5
0.2
1
25
100
Tc = −55°C
3
0.5
0.1
0.3
3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.


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