Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3443 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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2SK3443 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3443 2009-09-29 4 10 1 0 −0.2 −0.4 −1.2 −2.0 100 −1.6 1000 Common source Tc = 25°C Pulse test −0.6 −0.8 −1.0 −1.4 −1.8 VGS = 0 V 3 V 5 V 10 V Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 −80 −40 0 40 80 120 160 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 ID = 30 A ID = 7.5 A ID = 15 A Common source VGS = 10 V Pulse test 40 80 10 0 40 80 120 200 120 160 160 200 0 −80 −40 0 40 80 120 160 1 2 3 4 5 6 Common source VDS = 10 V ID = 1 mA Pulse test 40 80 0 0 20 40 60 100 120 160 80 200 VDD = 120 V 60 V 30 V VGS VDS Common source ID = 30 A Tc = 25°C Pulse test 0 4 8 12 16 20 50 300 1000 5000 10 0.1 1 3 30 100 1000 100 30 500 3000 10000 10 300 30000 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C |
Ähnliche Teilenummer - 2SK3443_09 |
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Ähnliche Beschreibung - 2SK3443_09 |
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