Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3810U Datenblatt(PDF) 3 Page - Microsemi Corporation |
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2N3810U Datenblatt(HTML) 3 Page - Microsemi Corporation |
3 / 3 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 T4-LDS-0118 Rev. 1 (091095) Page 3 of 3 DYNAMIC CHARACTERISTICS (cont.) Parameters / Test Conditions Symbol Min. Max. Unit Noise Figure IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ 2N3810, L, U F1 7.0 IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ 2N3810, L, U F2 3.0 IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ 2N3810, L, U F3 2.5 IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3810, L, U F4 3.5 dB IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ 2N3811, L, U F1 4.0 IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ 2N3811, L, U F2 1.5 IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ 2N3811, L, U F3 2.0 IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3811, L, U F4 2.5 dB |
Ähnliche Teilenummer - 2N3810U |
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Ähnliche Beschreibung - 2N3810U |
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