2N3998 datasheet(2/4 Pages) MICROSEMI

Teilenummer	2N3998

Bauteilbeschribung	NPN POWER SWITCHING SILICON TRANSISTOR

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Hersteller	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

T4-LDS-0165 Rev. 1 (100688)

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

IC = 50mAdc, VCE = 2.0Vdc

IC = 1.0Adc, VCE = 2.0Vdc

IC = 5.0Adc, VCE = 5.0Vdc

2N3996, 2N3998

hFE

30

40

15

120

IC = 50mAdc, VCE = 2.0Vdc

IC = 1.0Adc, VCE = 2.0Vdc

IC = 5.0Adc, VCE = 5.0Vdc

2N3997, 2N3999

60

80

20

240

Collector-Emitter Saturation Voltage

IC = 1.0Adc, IB = 0.1Adc

IC = 5.0Adc, IB = 0.5Adc

VCE(sat)

0.25

2.0

Vdc

Base-Emitter Saturation Voltage

IC = 1.0Adc, IB = 0.1Adc

IC = 5.0Adc, IB = 0.5Adc

VBE(sat)

0.6

1.2

1.6

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 1.0Adc, VCE = 5.0Vdc, f = 10MHz

|hfe|

3.0

12

Output Capacitance

VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

150

pF

SAFE OPERATING AREA

DC Tests

TC = +100°C, 1 Cycle, t = 1.0s

Test 1

VCE = 80Vdc, IC = 0.08Adc

Test 2

VCE = 20Vdc, IC = 1.5Adc

(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

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