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FW282 Datenblatt(PDF) 1 Page - Sanyo Semicon Device

Teilenummer FW282
Bauteilbeschribung  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW282 Datenblatt(HTML) 1 Page - Sanyo Semicon Device

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FW282
No. A1549-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
35
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
6A
Drain Current (PW≤10s)
ID
Duty cycle≤1%
6.5
A
Drain Current (PW≤10μs)
IDP
Duty cycle≤1%
24
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
1.8
W
Total Dissipation
PT
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
2.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
35
V
Zero-Gate Voltage Drain Current
IDSS
VDS=35V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=6A
1.8
3
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=6A, VGS=10V
28
37
RDS(on)2
ID=3A, VGS=4.5V
43
61
RDS(on)3
ID=3A, VGS=4V
52
73
Marking : W282
Continued on next page.
Ordering number : ENA1549
90209PA TK IM TC-00002093
SANYO Semiconductors
DATA SHEET
FW282
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network


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