FW813 datasheet(2/4 Pages) SANYO

Teilenummer	FW813

Bauteilbeschribung	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Hersteller	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

FW813

No. A1884-2/4

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

60

V

Zero-Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=5A

4.2

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=5A, VGS=10V

39

49

mΩ

RDS(on)2

ID=3A, VGS=4.5V

54

76

mΩ

RDS(on)3

ID=3A, VGS=4V

64

90

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

725

pF

Output Capacitance

Coss

VDS=20V, f=1MHz

60

pF

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz

45

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

9.6

ns

Rise Time

tr

See speciﬁed Test Circuit.

18

ns

Turn-OFF Delay Time

td(off)

See speciﬁed Test Circuit.

49

ns

Fall Time

tf

See speciﬁed Test Circuit.

27

ns

Total Gate Charge

Qg

VDS=30V, VGS=10V, ID=5A

15

nC

Gate-to-Source Charge

Qgs

VDS=30V, VGS=10V, ID=5A

2.4

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=30V, VGS=10V, ID=5A

3.2

nC

Diode Forward Voltage

VSD

IS=5A, VGS=0V

0.81

1.2

V

Switching Time Test Circuit

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID=5A

RL=6Ω

VDD=30V

VOUT

FW813

VIN

10V

0V

VIN

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

ID -- VDS

IT16122

IT16123

0

4.0

0

5

4

3

1

2

1.0

0.2

0.3

0.4

0.1

0.5

0.6

0.7

0.8

0.9

0

10

1.5

2.5

3.5

1.0

0.5

2.0

3.0

9

7

5

1

2

3

8

6

4

VGS=2.5V

25

°C

VDS=10V

3.0V

3.5V

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