Datenblatt-Suchmaschine für elektronische Bauteile |
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FW813 Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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FW813 Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page FW813 No. A1884-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=5A 4.2 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=5A, VGS=10V 39 49 mΩ RDS(on)2 ID=3A, VGS=4.5V 54 76 mΩ RDS(on)3 ID=3A, VGS=4V 64 90 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 725 pF Output Capacitance Coss VDS=20V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 45 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.6 ns Rise Time tr See specified Test Circuit. 18 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 49 ns Fall Time tf See specified Test Circuit. 27 ns Total Gate Charge Qg VDS=30V, VGS=10V, ID=5A 15 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=5A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=5A 3.2 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.81 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID=5A RL=6Ω VDD=30V VOUT FW813 VIN 10V 0V VIN ID -- VGS Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V ID -- VDS IT16122 IT16123 0 4.0 0 0 5 4 3 1 2 1.0 0.2 0.3 0.4 0.1 0.5 0.6 0.7 0.8 0.9 0 10 1.5 2.5 3.5 1.0 0.5 2.0 3.0 9 7 5 1 2 3 8 6 4 VGS=2.5V 25 °C VDS=10V 3.0V 3.5V |
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