MMBD7000, Rev. D

Small signal Diode

Absolute Maximum Ratings*

T

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

MMBD7000

2001 Fairchild Semiconductor Corporation

Thermal Characteristics

Symbol

Parameter

Value

Units

P

D

Power Dissipation

350

mW

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Value

Units

V

RRM

Maximum Repetitive Reverse Voltage

100

V

I

F(AV)

Average Rectified Forward Current

200

mA

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

A

A

T

stg

Storage Temperature Range

-55 to +150

°C

T

J

Operating Junction Temperature

150

°C

1

2

3

5C

3

1

2

SOT-23

12

3

Connection Diagram

Symbol

Parameter

Test Conditions

Min

Max

Units

Breakdown Voltage

100

V

Forward Voltage

I

I

550

670

0.75

700

820

1.1

mV

mV

V

Reverse Current

V

500

300

100

nA

nA

µA

C

T

Total Capacitance

1.5

pF

t

rr

Reverse Recovery Time

R

4.0

ns