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STK22C48 Datenblatt(PDF) 4 Page - Cypress Semiconductor

Teilenummer STK22C48
Bauteilbeschribung  16-Kbit (2 K 횞 8) AutoStore??nvSRAM
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Hersteller  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

STK22C48 Datenblatt(HTML) 4 Page - Cypress Semiconductor

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STK22C48
Document Number: 001-51000 Rev. *D
Page 4 of 17
Device Operation
The STK22C48 nvSRAM is made up of two functional
components paired in the same physical cell. These are an
SRAM memory cell and a nonvolatile QuantumTrap cell. The
SRAM memory cell operates as a standard fast static RAM. Data
in the SRAM is transferred to the nonvolatile cell (the STORE
operation) or from the nonvolatile cell to SRAM (the RECALL
operation). This unique architecture enables the storage and
recall of all cells in parallel. During the STORE and RECALL
operations, SRAM Read and Write operations are inhibited. The
STK22C48 supports unlimited reads and writes similar to a
typical SRAM. In addition, it provides unlimited RECALL
operations from the nonvolatile cells and up to one million
STORE operations.
SRAM Read
The STK22C48 performs a Read cycle whenever CE and OE are
LOW while WE and HSB are HIGH. The address specified on
pins A0–10 determines the 2,048 data bytes accessed. When the
Read is initiated by an address transition, the outputs are valid
after a delay of tAA (Read cycle 1). If the Read is initiated by CE
or OE, the outputs are valid at tACE or at tDOE, whichever is later
(Read cycle 2). The data outputs repeatedly respond to address
changes within the tAA access time without the need for
transitions on any control input pins, and remains valid until
another address change or until CE or OE is brought HIGH, or
WE or HSB is brought LOW.
SRAM Write
A Write cycle is performed whenever CE and WE are LOW and
HSB is HIGH. The address inputs must be stable prior to entering
the Write cycle and must remain stable until either CE or WE
goes HIGH at the end of the cycle. The data on the common I/O
pins DQ0–7 are written into the memory if it has valid tSD, before
the end of a WE controlled Write or before the end of an CE
controlled Write. Keep OE HIGH during the entire Write cycle to
avoid data bus contention on common I/O lines. If OE is left LOW,
internal circuitry turns off the output buffers tHZWE after WE goes
LOW.
AutoStore Operation
During normal operation, the device draws current from VCC to
charge a capacitor connected to the VCAP pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the VCC pin drops below VSWITCH, the part
automatically disconnects the VCAP pin from VCC. A STORE
operation is initiated with power provided by the VCAP capacitor.
Figure 2 shows the proper connection of the storage capacitor
(VCAP) for automatic store operation. A charge storage capacitor
between 68 µF and 220 µF (+20%) rated at 6 V should be
In system power mode, both VCC and VCAP are connected to the
+5 V power supply without the 68
μF capacitor. In this mode, the
AutoStore function of the STK22C48 operates on the stored
system charge as power goes down. The user must, however,
guarantee that VCC does not drop below 3.6 V during the 10 ms
STORE cycle.
To prevent unneeded STORE operations, automatic STOREs
and those initiated by externally driving HSB LOW are ignored,
unless at least one WRITE operation takes place since the most
recent STORE or RECALL cycle. An optional pull-up resistor is
shown connected to HSB. This is used to signal the system that
the AutoStore cycle is in progress.
AutoStore Inhibit mode
If an automatic STORE on power loss is not required, then VCC
is tied to ground and +5 V is applied to VCAP (Figure 3 on page
5). This is the AutoStore Inhibit mode, where the AutoStore
function is disabled. If the STK22C48 is operated in this config-
uration, references to VCC are changed to VCAP throughout this
data sheet. In this mode, STORE operations are triggered with
the HSB pin. It is not permissible to change between these three
options “on the fly”.
Figure 2. AutoStore Mode
[+] Feedback


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