Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2655GX-AE3-R Datenblatt(PDF) 3 Page - Unisonic Technologies |
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2SC2655GX-AE3-R Datenblatt(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SC2655 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R211-013,E TYPICAL CHARACTERISTICS Ic-VCE Collector -Emitter Voltage, VcE(V) 02 4 6 10 0 0.4 0.8 1.2 1.6 12 2.0 8 Common Emitter Ta=25°С hFE -Ic Collector Current, Ic (A) 0.01 0.03 0.1 10 30 50 0.3 100 300 1 500 IB=2mA 10 12 15 4 VCE-Ic Collector Current, Ic (A) 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 1 1.6 Common Emitter Ta=25°С IB=5mA 10 20 30 40 2.4 Collector Current, Ic (A) VCE-Ic Collector Current, Ic (A) Ta=-55°С VCE(SAT) -Ic Collector Current, Ic (A) 0.01 0.03 0.1 0.02 0.05 0.3 0.1 0.3 1 0.5 Ta=100°С Ta=25°С Ta=-55°С 0.05 0.5 14 2.4 8 6 18 20 25 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 1 1.6 IB=5mA 10 20 30 40 2.4 VCE-Ic Common Emitter Ta=100°С 0 0.4 0.8 1.2 2.0 0 0.2 0.4 0.6 0.8 1 1.6 IB=5mA 10 20 30 40 2.4 Common EmitterTa= -55°С 50 1000 Common Emitter VCE=2V Ta=100°С Ta=25°С 1 Common Emitter Ic/IB=20 |
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