Datenblatt-Suchmaschine für elektronische Bauteile |
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3N90G-TF3-T Datenblatt(PDF) 3 Page - Unisonic Technologies |
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3N90G-TF3-T Datenblatt(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N90 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-290.A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Reverse Recovery Current IRRM 8.7 A Body Diode Reverse Recovery Time tRR 510 ns Body Diode Reverse Recovery Charge QRR ISD=3A, di/dt=100A/μs, VDD=100V, TJ=25°C 2.2 nC Note: 1.Pulse width=300μs, Duty cycle≦1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. |
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Ähnliche Beschreibung - 3N90G-TF3-T |
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