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SB10-09 Datenblatt(PDF) 1 Page - Sanyo Semicon Device |
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SB10-09 Datenblatt(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page 43098HA (KT)/2079MO/O318TA, TS TS No.2829-1/3 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Schottky Barrier Diode 90V, 1A Rectifier Ordering number:EN2829B SB10-09F r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e P e v i t i t e p e RV M R R 0 9V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o NV M S R 5 9V t n e r r u C t u p t u O e g a r e v AIO 1A t n e r r u C d r a w r o F e g r u SI M S F e l c y c 1 , e v a w e n i s z H 0 5 0 1A e r u t a r e p m e T n o i t c n u Jj T 5 2 1 + o t 5 5 – e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C ˚C ˚C Package Dimensions unit:mm 1200A [SB10-09F] trr Test Circuit 1:Anode 2:Cathode 3:No Contact SANYO:TO-126LP Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. r e t e m a r a P l o b m y S s n o t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V e s r e v e RVR IR A m 1 =0 9V e g a t l o V d r a w r o FVF IF A 1 = 7 . 0V t n e r r u C e s r e v e RIR VR V 5 4 = 0 0 4A µ e c n a t i c a p a C l a n i m r e t r e t n IC VR z H M 1 = f , V 0 1 =0 7F p e m i T y r e v o c e R e s r e v e Rr r tIF I = R A m 0 0 1 = 0 2s n e c n a t s i s e R l a m r e h Tc - j h t RC D d e h t o o m S : e s a C - n o i t c n u J4 ˚C/W 50Hz, resistive load, Tc=119˚C |
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