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SB30-03P Datenblatt(PDF) 1 Page - Sanyo Semicon Device |
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SB30-03P Datenblatt(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page 41098HA (KT)/D151MH (KOTO) No.3868-1/2 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier Ordering number:EN3868 SB30-03P Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C ˚C ˚C Package Dimensions unit:mm 1244 [SB30-03P] Marking:SG trr Test Circuit A:Anode C:Cathode SANYO:PCP Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. ˚C/W ˚C/W Mounted on 250mm2 ×0.8mm ceramic board Unit (resistance: Ω) r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e P e v i t i t e p e RV M R R 0 3V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o NV M S R 5 3V t n e r r u C t u p t u O e g a r e v AIO 3A t n e r r u C d r a w r o F e g r u SI M S F e l c y c 1 , e v a w e n i s z H 0 5 0 1A e r u t a r e p m e T n o i t c n u Jj T 5 2 1 + o t 5 5 – e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – r e t e m a r a P l o b m y S s n o t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V e s r e v e RVR IR A m 1 =0 3V e g a t l o V d r a w r o FVF IF A 3 = 5 5 . 0V t n e r r u C e s r e v e RIR VR V 5 1 = 0 0 2A µ e c n a t i c a p a C l a n i m r e t r e t n IC VR z H M 1 = f , V 0 1 =0 6 1F p e m i T y r e v o c e R e s r e v e Rr r tIF I = R t i u c r i C t s e T d e i f i c p e s e e S , A m 0 0 3 = 0 3s n e c n a t s i s e R l a m r e h T ) 1 ( a - j h t R 0 8 2 ) 2 ( a - j h t R 0 0 1 |
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