© 2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FAN5236 • Rev. 1.3.2

9

FPWM1 (VOUT1)

2

C6

DDR

L1

Q1B

5

27

C8

1.8V at 6A

L2

24

PW M 1

PW M 2

ILIM1

14

13

11

R4

R5

18

28

VCC

+5

ILIM2

Q2B

C7

D1

+5

6

4

R6

7

25

R7

23

D2

+5

9

22

C4

19

VSEN2

ISNS2

1

R2

PG1

15

+5

3

26

PGND2

SW2

HDRV2

ISNS1

PGND2

Q1A

Q2A

20

FPWM2

R8

R9

10

VSEN1

LDRV1

BOOT2

HDRV1

SW1

BOOT1

VIN

LDRV2

C5

C1

VIN

R1

2.5V at 6A

PG2

16

EN2

21

R3

VIN (BATTERY)

=5 to 24V

C9

SS2

17

C3

AGND

EN1

8

SS1

12

C2

Figure 6. Dual Regulator Application

Table 2. DDR Regulator BOM

Item

Description

Qty.

Ref.

Vendor

Part Number

1

Capacitor 68µf, Tantalum, 25V, ESR 95m

Ω

1

C1

AVX

TPSV686*025#095

2

Capacitor 10nf, Ceramic

2

C2, C3

Any

3

Capacitor 68µf, Tantalum, 6V, ESR 1.8

Ω

1

C4

AVX

TAJB686*006

4

Capacitor 150nF, Ceramic

2

C5, C7

Any

5

Capacitor 330µf, Poscap, 4V, ESR 40m

Ω

2

C6, C8

Sanyo

4TPB330ML

5

Capacitor 0.1µF, Ceramic

2

C9

Any

11

56.2K

Ω, 1% Resistor

2

R1, R2

Any

12

10K

Ω, 5% Resistor

2

R3

Any

13

3.24K

Ω, 1% Resistor

1

R4

Any

14

1.82K

Ω, 1% Resistor

3

R5, R8,

R9

Any

15

1.5K

Ω, 1% Resistor

2

R6, R7

Any

27

Schottky Diode 30V

2

D1, D2

Fairchild

Semiconductor

BAT54

28

Inductor 6.4µH, 6A, 8.64m

Ω

1

L1, L2

Panasonic

ETQ-P6F6R4HFA

29

Dual MOSFET with Schottky

1

Q1

Fairchild

Semiconductor

FDS6986AS

(2)

30

DDR Controller

1

U1

Fairchild

Semiconductor

FAN5236

Note:

2.

If currents above 4A continuous are required, use single SO-8 packages. For more information, refer to the

Power MOSFET Selection Section and AN-6002 for design calculations.