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SDR1G Datenblatt(PDF) 2 Page - Solid States Devices, Inc |
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SDR1G Datenblatt(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL VALUE UNIT Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = 25ºC) SDR1D thru SDR1J SDR1K thru SDR1N VF1 1.70 1.90 Vdc Instantaneous Forward Voltage Drop (IF = 1Adc, 300- 500 μs Pulse, TA = -55ºC) SDR1D thru SDR1J SDR1K thru SDR1N VF2 2.10 2.30 Vdc Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 25ºC) IR1 5 μA Maximum Reverse Leakage Current (Rated VR, 300 μs Pulse Minimum , TA = 100ºC) IR2 500 μA Junction Capacitance (VR = 10Vdc, TA = 25ºC , f = 1MHz) CJ 24 pf Maximum Reverse Recovery Time 4/ SDR1D thru SDR1J SDR1K SDR1M SDR1N trr 50 60 70 80 ns Axial Leaded Case Outline 5/: DIMENSIONS DIM. MIN. MAX. A --- .150” B --- .190” C .027” .033” D .95” --- Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR1D thru SDR1N NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0005H DOC |
Ähnliche Teilenummer - SDR1G |
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